Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm

doi:10.11972/j.issn.1001-9014.2015.02.016

	Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm
其他题名	Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm
	Duan, Li-Hua 1,2,3; Zhang, Shu-Fang4 ; Zhou, Yong 3; Zhang, Jing 3; Guo, Hong 3; Luo, Qing-Chun 3; Fang, Liang 1,2
	2015-04-01
发表期刊	JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN	1001-9014
卷号	34 期号:2 页码:218-223
摘要	A high speed 1053 nm superluminescent diode (SLD) with ridge-waveguide structure has been fabricated. By optimizing of the growth parameters such as temperature, growth rate, epitaxial materials with excellent crystal quality were attained. The photoelectric characteristics of the SLD depended on temperature and driver current were analyzed. The coefficient of the wavelength shift with temperature was 0.35 nm/. The wavelength of the SLD shift with driver current insensitive to the temperature. A -3 dB cutoff frequency of 1.7 GHz was obtained at a DC bias current of 100 mA and 25, corresponding to 2.5 mW output power from single mode fiber (SMF) with spectral modulation of less than 0.15 dB and spectral width of 24 nm. ©, 2015, Chinese Optical Society. All right reserved.
关键词	Cutoff frequency Diodes Growth rate Modulation Photoelectricity Ridge waveguides 1053 nm Crystal qualities Epitaxial materials Modulation bandwidth Photoelectric characteristics Ridge waveguide structures Spectral modulation Superluminescent diode
DOI	10.11972/j.issn.1001-9014.2015.02.016
URL	查看原文
收录类别	EI ; PKU ; ISTIC ; SCI
语种	中文
出版者	Chinese Optical Society
EI入藏号	20152100871652
EI分类号	714.3 Waveguides ; 741.1 Light/Optics ; 741.1.2 Fiber Optics
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://ir.cqcet.edu.cn/handle/39TD4454/2924
专题	人工智能与大数据学院
作者单位	1.State Key Laboratory of Mechanical Transmission, Chongqing University, Chongqing; 400044, China; 2.Department of Applied Physics, Chongqing University, Chongqing; 401331, China; 3.Chongqing Optoelectronics Research Institute, Chongqing; 400060, China; 4.College of Software, Chongqing College of Electronic Engineering, Chongqing; 401331, China
推荐引用方式 GB/T 7714	Duan, Li-Hua,Zhang, Shu-Fang,Zhou, Yong,et al. Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2015,34(2):218-223.
APA	Duan, Li-Hua.,Zhang, Shu-Fang.,Zhou, Yong.,Zhang, Jing.,Guo, Hong.,...&Fang, Liang.(2015).Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm.JOURNAL OF INFRARED AND MILLIMETER WAVES,34(2),218-223.
MLA	Duan, Li-Hua,et al."Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm".JOURNAL OF INFRARED AND MILLIMETER WAVES 34.2(2015):218-223.